Low-temperature plasma-assisted MBE yields crack-free, phase-pure, N-polar wurtzite Sc_xAl1-xN films on Si(111) for scandium contents up to x=0.3.
P e \' e rez-Campos , author M
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Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
Low-temperature plasma-assisted MBE yields crack-free, phase-pure, N-polar wurtzite Sc_xAl1-xN films on Si(111) for scandium contents up to x=0.3.