In (In_xGa_{1-x})_2O_3 films the optical gap redshifts 1 eV up to x=0.46 while self-trapped hole PL redshifts 0.5 eV; saturation behavior indicates incipient phase separation at x~0.3, with Urbach energies larger than in MgZnO due to stronger hole-phonon coupling.
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Optical Properties of Indium-Gallium-Oxide Microcrystalline Alloy Films: From the Visible to the Deep-UV
In (In_xGa_{1-x})_2O_3 films the optical gap redshifts 1 eV up to x=0.46 while self-trapped hole PL redshifts 0.5 eV; saturation behavior indicates incipient phase separation at x~0.3, with Urbach energies larger than in MgZnO due to stronger hole-phonon coupling.