Twisting bilayer CuBr2 by 90 degrees reconstructs altermagnetic symmetry to produce an intrinsic bipolar altermagnetic semiconductor where electrostatic gating controls carrier type, spin, and layer simultaneously.
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Spin-Axis-Layer Locking for Intrinsic Bipolar Altermagnetic Semiconductors: Proof-of-Concept in Bilayer CuBr2
Twisting bilayer CuBr2 by 90 degrees reconstructs altermagnetic symmetry to produce an intrinsic bipolar altermagnetic semiconductor where electrostatic gating controls carrier type, spin, and layer simultaneously.