A closed-form expression for short-time signal development in silicon diode sensors shows that impact-ionization gain in an idealized LGAD detector retains an advantage over PIN diodes at frame rates up to 10 GHz.
Robbins et al., Electron and hole impact ionization coefficients in (100) and in (111) Si
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Signal Development for Saturated Ultrafast Sensors with Impact Ionization Gain
A closed-form expression for short-time signal development in silicon diode sensors shows that impact-ionization gain in an idealized LGAD detector retains an advantage over PIN diodes at frame rates up to 10 GHz.