Simulations constrain TaOx resistive switching filaments to diameters of 6-22 nm, trunk composition TaO1.3 or lower, and gap composition TaO1.7-TaO1.85, implying much higher oxygen deficiency than prior models.
High-Throughput Phase-Field Simulations and Machine Learning of Resistive Switching in Resistive Random-Access Memory
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Parametric study of filament and gap models of resistive switching in TaO$_x$-based devices
Simulations constrain TaOx resistive switching filaments to diameters of 6-22 nm, trunk composition TaO1.3 or lower, and gap composition TaO1.7-TaO1.85, implying much higher oxygen deficiency than prior models.