A MEMS device applies in-situ strain to freestanding 80 nm BiFeO3 films, enabling control of their ferroelectric and spin-cycloid configurations under X-ray imaging.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2026 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
In-situ Straining of Epitaxial Freestanding Ferroic Films by a MEMS Device
A MEMS device applies in-situ strain to freestanding 80 nm BiFeO3 films, enabling control of their ferroelectric and spin-cycloid configurations under X-ray imaging.