First-principles and tight-binding calculations on three FI/TI van der Waals stacks predict a magnetization-induced gap that supports half-quantized anomalous Hall conductance of e²/2h.
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Half-quantized anomalous Hall conductance in topological insulator/ferromagnet van der Waals heterostructures
First-principles and tight-binding calculations on three FI/TI van der Waals stacks predict a magnetization-induced gap that supports half-quantized anomalous Hall conductance of e²/2h.