Area-ratio engineering of AlScN MFMIS gate stacks on GaN HEMTs yields record 27 V memory windows, 4-bit MLC arrays, multi-state inverters and the first GaN ferroelectric frequency-to-voltage converter.
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Monolithic GaN Systems Combining Non-Volatile Memory and Analog Computing via Area-Ratio-Engineered Ferroelectric AlScN Gate Stacks
Area-ratio engineering of AlScN MFMIS gate stacks on GaN HEMTs yields record 27 V memory windows, 4-bit MLC arrays, multi-state inverters and the first GaN ferroelectric frequency-to-voltage converter.