Stark tuning of T centres in silicon nanophotonic cavities with p-i-n diodes achieves 30 GHz shifts, resonance for 55% of on-chip emitters, tunable lifetime reduction, and a model predicting large entanglement-rate gains.
Title resolution pending
3 Pith papers cite this work. Polarity classification is still indexing.
3
Pith papers citing it
citation-role summary
background 1
citation-polarity summary
years
2026 3verdicts
UNVERDICTED 3roles
background 1polarities
background 1representative citing papers
Carbon-nitrogen interstitial pairs and oxygen-containing complexes are identified as the likely atomic structures for the N-line series in silicon, offering isoelectronic alternatives to the T-center for spin qubits.
A practical review summarizing principles and requirements of modern cryogenic systems from flow cryostats to dilution refrigerators for solid-state quantum optical devices.
citing papers explorer
-
Spectral tuning of single T centres by the Stark effect
Stark tuning of T centres in silicon nanophotonic cavities with p-i-n diodes achieves 30 GHz shifts, resonance for 55% of on-chip emitters, tunable lifetime reduction, and a model predicting large entanglement-rate gains.
-
First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon
Carbon-nitrogen interstitial pairs and oxygen-containing complexes are identified as the likely atomic structures for the N-line series in silicon, offering isoelectronic alternatives to the T-center for spin qubits.
-
Cryogenic Systems for Quantum Photonic Technologies: A Practical Review
A practical review summarizing principles and requirements of modern cryogenic systems from flow cryostats to dilution refrigerators for solid-state quantum optical devices.