A combined finite-element and quantum simulation attributes the large gate-voltage tunability of the g-factor in germanium hole spin qubits to inhomogeneous thermal-contraction strain and wavefunction averaging.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2026 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Gate Control of g-factor in Germanium Quantum Dots: A Strain-Based Explanation
A combined finite-element and quantum simulation attributes the large gate-voltage tunability of the g-factor in germanium hole spin qubits to inhomogeneous thermal-contraction strain and wavefunction averaging.