Cu enrichment in Cu1+xMn1-ySiTe3 reduces stacking faults, enhancing SHG response and introducing a spin-flop transition in antiferromagnetic order while shifting to doped semiconducting behavior.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Defect Control via Cu Enrichment Enhances Multifunctional Properties in the Polar Semiconductor Cu1+xMn1-ySiTe3
Cu enrichment in Cu1+xMn1-ySiTe3 reduces stacking faults, enhancing SHG response and introducing a spin-flop transition in antiferromagnetic order while shifting to doped semiconducting behavior.