UV-irradiated InP/ZnS quantum dots show afterglow and a thermoluminescence peak at about 140 K, attributed to shallow traps with activation energies of 26-31 meV, low retrapping, and recombination via indium and phosphorus dangling-bond defects.
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Mechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum Dots
UV-irradiated InP/ZnS quantum dots show afterglow and a thermoluminescence peak at about 140 K, attributed to shallow traps with activation energies of 26-31 meV, low retrapping, and recombination via indium and phosphorus dangling-bond defects.