EBSD pattern quality metrics in silicon exhibit strong modulations that follow the underlying electron channeling pattern in both raw and corrected data.
Winkelmann, Dynamical effects of anisotropic inelastic scattering in electron backscatter diffraction, Ultramicroscopy 108 (2008) 1546–1550
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Channeling-in channeling-out revisited: selected area electron channeling and electron backscatter diffraction
EBSD pattern quality metrics in silicon exhibit strong modulations that follow the underlying electron channeling pattern in both raw and corrected data.