Oxygen electromigration into a BaTbO3 reservoir raises [100]-tilt YBCO grain-boundary junction resistance to hundreds of ohms without degrading the IcRn product at 4.2 K.
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High-resistance YBa2Cu3O7-x grain-boundary Josephson junctions fabricated by electromigration
Oxygen electromigration into a BaTbO3 reservoir raises [100]-tilt YBCO grain-boundary junction resistance to hundreds of ohms without degrading the IcRn product at 4.2 K.