Simulation study of EBL-free AlInN nanowire DUV LEDs reports higher IQE without droop up to 1500 A/cm2 and strong TM polarization versus AlGaN devices.
Reduction of oscillator strength due to piezoelectric fields in G a N/A l x Ga 1 − x N quantum wells
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Design and characteristic study of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
Simulation study of EBL-free AlInN nanowire DUV LEDs reports higher IQE without droop up to 1500 A/cm2 and strong TM polarization versus AlGaN devices.