Varying oxygen partial pressure during sputtering of Cu-W-O films produces either pure CuWO4 or CuWO4 plus Cu3WO6 mixtures, with XPS revealing Cu surface segregation and initial-state electronic structure shifts rather than final-state screening changes.
Despite the XRD-apparent purity of these low-oxygen samples, optical characteri- zation reveals a reduced bandgap indicative of an un- detected amorphous CuO phase
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Oxygen-Mediated Phase Evolution in Sputtered Cu-W-O: Insights into Surface Chemistry Variability
Varying oxygen partial pressure during sputtering of Cu-W-O films produces either pure CuWO4 or CuWO4 plus Cu3WO6 mixtures, with XPS revealing Cu surface segregation and initial-state electronic structure shifts rather than final-state screening changes.