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Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges,

Electron mobility in AlN from first principles Amanda Wang1, Nick Pant1,2, Woncheol Lee3, Jie-Cheng Chen4,5, Feliciano Giustino4,5, Emmanouil Kioupakis1 1 Department of Materials Science, Engineering, University of Michigan, Ann Arbor, M · 2022

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Electron mobility in AlN from first principles

cond-mat.mtrl-sci · 2025-06-10 · conditional · novelty 7.0

First-principles calculations predict AlN electron Hall mobility up to 956 cm²/V·s at low doping, with piezoelectric acoustic-phonon scattering dominating at room temperature.

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  • Electron mobility in AlN from first principles cond-mat.mtrl-sci · 2025-06-10 · conditional · none · ref 1

    First-principles calculations predict AlN electron Hall mobility up to 956 cm²/V·s at low doping, with piezoelectric acoustic-phonon scattering dominating at room temperature.