A thin-contact, thick-channel IGZO transistor achieves 20 cm2/Vs mobility and a 15 mV threshold shift after stress, breaking the performance/reliability tradeoff.
[4]W.Fichtner,IEEE Solid State Circuits and Technology Workshop on Scaling and Microlithography,New York, 1980
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Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties
A thin-contact, thick-channel IGZO transistor achieves 20 cm2/Vs mobility and a 15 mV threshold shift after stress, breaking the performance/reliability tradeoff.