Near a valley level anti-crossing in a Si-MOS quantum dot, inter-valley spin coupling activates an electric-dipole transition that enhances the electron spin Rabi frequency.
The starting dataset is the spectral power of singlet return probability as a function of manipula- tion time for a range of applied magnetic field strengths and orientations
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SiMOS quantum dots exhibit an order of magnitude larger spin-valley coupling than Si/SiGe devices, with similar angular dependence that can be minimized at specific magnetic field orientations.
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Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Near a valley level anti-crossing in a Si-MOS quantum dot, inter-valley spin coupling activates an electric-dipole transition that enhances the electron spin Rabi frequency.
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Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots
SiMOS quantum dots exhibit an order of magnitude larger spin-valley coupling than Si/SiGe devices, with similar angular dependence that can be minimized at specific magnetic field orientations.