A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.
Cadot et al., « A novel 2-step ALD route to ultra-thin MoS2 films on SiO2 through a surface organometallic intermediate », Nanoscale, vol
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A new method to probe conducting filaments in MoS$_2$-based memristors
A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.