Graphene EMR devices achieve record room-temperature magnetoresistance (4.6 × 10^7%) and sensitivity (104 kΩ/T), and daisy-chaining them increases sensitivity linearly.
The hBN- graphene-hBN stacks were placed on highly p-doped Si substrates with a 300 nm thick SiO2 layer on top
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2024 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Extraordinary magnetoresistance in high-quality graphene devices with daisy chains and Fermi-level pinning
Graphene EMR devices achieve record room-temperature magnetoresistance (4.6 × 10^7%) and sensitivity (104 kΩ/T), and daisy-chaining them increases sensitivity linearly.