A 65 nm nMOSFET is measured from 292 K to 4.5 K and fitted by TCAD with TEM-derived structure, yielding a single cryogenic parameter set with only saturation velocity made temperature dependent.
Simulation of Silicon Nanodevices at Cryogenic Temperatures for Quantum Computing,
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.comp-ph 1years
2026 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data
A 65 nm nMOSFET is measured from 292 K to 4.5 K and fitted by TCAD with TEM-derived structure, yielding a single cryogenic parameter set with only saturation velocity made temperature dependent.