Quasi-vertical AlN Schottky diodes maintain rectifying operation to 300 C with thermally activated current increase, Poole-Frenkel leakage from 0.34 eV traps, and a 5 nm interfacial AlNxOy layer.
Electron mobility in AlN from first principles
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Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
Quasi-vertical AlN Schottky diodes maintain rectifying operation to 300 C with thermally activated current increase, Poole-Frenkel leakage from 0.34 eV traps, and a 5 nm interfacial AlNxOy layer.