Aluminium deposited on germanium and annealed at 350 degrees Celsius forms a p+ Al-Ge contact layer whose aluminium diffusion depth is roughly four times the deposited film thickness.
Germanium gamma-ray detectors,
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Fabrication of p+ contact by thermally induced solid state regrowth of Al on p-type Ge crystal
Aluminium deposited on germanium and annealed at 350 degrees Celsius forms a p+ Al-Ge contact layer whose aluminium diffusion depth is roughly four times the deposited film thickness.