A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.
Chen et al., « The plasticity of synaptic memristor based on 2D-MoS2 thin film prepared in large-scale by a PLD-assisted CVD method », Materials Today Communications, vol
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A new method to probe conducting filaments in MoS$_2$-based memristors
A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.