DFT+DMFT reveals RuO2 sits near the paramagnetic-altermagnetic boundary and itinerant-localized crossover, making its magnetic state tunable by minimal strain due to dynamical correlations.
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Third-order photoconductivities in d-wave altermagnets are determined solely by quantum metric and connection, with closed-form solutions when delta-bond hopping vanishes and perturbative solutions otherwise, verified numerically.
Sliding bilayer altermagnets host antiferromagnetic half-metallicity and Chern insulator phases via spin-dependent interlayer hopping in ferrovalley states, demonstrated in V2OSSe by first-principles calculations.
Compressive strain along [001] stabilizes altermagnetism in RuO2 films on (100) and (110) TiO2 substrates, tunable by film thickness, with (100) orientation yielding ideal altermagnetic order and (110) showing uncompensated ferrimagnetism.
Ultra-clean RuO2 crystals exhibit weakly correlated 3D Fermi-liquid behavior with susceptibility increasing with temperature due to lattice-expansion effects on the band structure.
citing papers explorer
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Correlation-driven tunability of altermagnetism in RuO$_2$
DFT+DMFT reveals RuO2 sits near the paramagnetic-altermagnetic boundary and itinerant-localized crossover, making its magnetic state tunable by minimal strain due to dynamical correlations.
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Third-order optical response in d-wave altermagnets: Analytical and numerical results from microscopic model
Third-order photoconductivities in d-wave altermagnets are determined solely by quantum metric and connection, with closed-form solutions when delta-bond hopping vanishes and perturbative solutions otherwise, verified numerically.
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Intrinsic antiferromagnetic half-metal and topological phases from the ferrovalley states of the sliding bilayer altermagnets
Sliding bilayer altermagnets host antiferromagnetic half-metallicity and Chern insulator phases via spin-dependent interlayer hopping in ferrovalley states, demonstrated in V2OSSe by first-principles calculations.
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Strain Engineering of Altermagnetic Symmetry in Epitaxial RuO$_2$ Films
Compressive strain along [001] stabilizes altermagnetism in RuO2 films on (100) and (110) TiO2 substrates, tunable by film thickness, with (100) orientation yielding ideal altermagnetic order and (110) showing uncompensated ferrimagnetism.
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Fermi-liquid behavior and characteristic temperature-dependent susceptibility in clean RuO$_2$ crystal
Ultra-clean RuO2 crystals exhibit weakly correlated 3D Fermi-liquid behavior with susceptibility increasing with temperature due to lattice-expansion effects on the band structure.