A scheme using modulated Raman pulses achieves spin-dependent kick infidelities below 10^{-5} in trapped ions despite micromotion by optimizing RF parameters to cancel backward kicks.
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Impulsive spin-dependent excitation enables high-fidelity non-local entangling gates between arbitrary ion pairs in chains of up to 40 trapped ions within 1.3-2 center-of-mass oscillation periods.
Depolarizing noise doubles the number of non-analytic points in the Loschmidt echo at dynamical phase transition times in the transverse-field Ising model, inducing an inherent error that zero-noise extrapolation cannot mitigate.
Photodissociation at 225 nm recovers Ba+ ions from reactions with background gases, increasing Coulomb crystal lifetime from 6 hours to 2 days.
citing papers explorer
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High-Fidelity Raman Spin-Dependent Kicks in the Presence of Micromotion
A scheme using modulated Raman pulses achieves spin-dependent kick infidelities below 10^{-5} in trapped ions despite micromotion by optimizing RF parameters to cancel backward kicks.
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High-speed and high-connectivity two-qubit gates in long chains of trapped ions
Impulsive spin-dependent excitation enables high-fidelity non-local entangling gates between arbitrary ion pairs in chains of up to 40 trapped ions within 1.3-2 center-of-mass oscillation periods.
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Quantum simulation of dynamical phase transitions in noisy quantum devices
Depolarizing noise doubles the number of non-analytic points in the Loschmidt echo at dynamical phase transition times in the transverse-field Ising model, inducing an inherent error that zero-noise extrapolation cannot mitigate.
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Increase of barium ion-trap lifetime via photodissociation
Photodissociation at 225 nm recovers Ba+ ions from reactions with background gases, increasing Coulomb crystal lifetime from 6 hours to 2 days.