Amorphous Fe-V-W-Al thin films on n-Si show |S| ~1098 μV/K, power factor ~33.9 mW/mK², κ ~2.75 W/mK and estimated ZT ~3.9 near 320 K, attributed to amorphous structure plus film-substrate composite effect.
Doping effects on thermoelectric properties of the off - stoichiometric Heusler compounds Fe2−xV1+xAl J
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Understanding the anomalous thermoelectric behaviour of Fe-V-W-Al based thin films
Amorphous Fe-V-W-Al thin films on n-Si show |S| ~1098 μV/K, power factor ~33.9 mW/mK², κ ~2.75 W/mK and estimated ZT ~3.9 near 320 K, attributed to amorphous structure plus film-substrate composite effect.