Individual silicon-vacancy centers can be characterized by extracting ground and excited state strain/Jahn-Teller coupling rates from a photoluminescence excitation splitting and a coherent population trapping resonance.
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Energy level structure of diamond silicon vacancy centers in an off-axis magnetic field
Individual silicon-vacancy centers can be characterized by extracting ground and excited state strain/Jahn-Teller coupling rates from a photoluminescence excitation splitting and a coherent population trapping resonance.