Ta/W bilayers in SOT-MTJs show enhanced damping-like torque from orbital Hall effect in Ta, yielding larger efficiency than W-only systems, robust PMA, 400°C annealing compatibility, and a demonstrated vertical non-local switching mechanism.
Field-free switching of a perpen- dicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques.Nature Electronics2018,1, 582–588
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Time-resolved THz polarimetry detects a helicity-dependent anomalous Hall conductivity in silicon that persists long after excitation and is independent of photon energy, pointing to an inverse orbital Hall effect.
citing papers explorer
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Orbital and Spin-Orbit Torque Interplay in Ta/W-based Magnetic Tunnel Junctions with Vertical Non-local Switching
Ta/W bilayers in SOT-MTJs show enhanced damping-like torque from orbital Hall effect in Ta, yielding larger efficiency than W-only systems, robust PMA, 400°C annealing compatibility, and a demonstrated vertical non-local switching mechanism.
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Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry
Time-resolved THz polarimetry detects a helicity-dependent anomalous Hall conductivity in silicon that persists long after excitation and is independent of photon energy, pointing to an inverse orbital Hall effect.