Post-growth oxygen annealing of Sr-rich STO films on Si(001) removes excess Sr through two temperature-dependent segregation mechanisms to yield stoichiometric epitaxial layers.
Applied Physics Letters 2021, 118 (9), 091904
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Stoichiometric Epitaxial Strontium Titanate Thin Films on Silicon by High-Temperature Sr Segregation
Post-growth oxygen annealing of Sr-rich STO films on Si(001) removes excess Sr through two temperature-dependent segregation mechanisms to yield stoichiometric epitaxial layers.