AlGaN PolFETs achieve ~960 mA/mm on-current, >4.8 MV/cm breakdown field, 1.28-2.17 kV breakdown with 1.25-2.86 mΩ·cm² on-resistance, and RF figures of 8.5/15 GHz.
AlN metal – semiconductor field-effect transistors using Si-ion implantation,
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High Breakdown Field Multi-kV UWBG AlGaN Transistors
AlGaN PolFETs achieve ~960 mA/mm on-current, >4.8 MV/cm breakdown field, 1.28-2.17 kV breakdown with 1.25-2.86 mΩ·cm² on-resistance, and RF figures of 8.5/15 GHz.