A higher-energy ion implantation and pulsed laser melting process yields strain-relaxed GeSn films with about 5.25 at.% substitutional tin and photoluminescence at 2045 nm.
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Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting
A higher-energy ion implantation and pulsed laser melting process yields strain-relaxed GeSn films with about 5.25 at.% substitutional tin and photoluminescence at 2045 nm.