Optimization of doping, bias, and geometry in SiC p-i-n diodes reduces charge noise and optical linewidth for embedded divacancy spin centers, with a new leakage-current noise formalism mitigated by defect placement away from surfaces.
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Enhancing Coherence of Spin Centers in p-n Diodes via Optimization Algorithms
Optimization of doping, bias, and geometry in SiC p-i-n diodes reduces charge noise and optical linewidth for embedded divacancy spin centers, with a new leakage-current noise formalism mitigated by defect placement away from surfaces.