Experimental demonstration of a tunable, field-free Josephson diode in sputter-deposited NbN/GdN/NbN mesa junctions showing up to 40% efficiency at zero field and operation to 4.2 K.
Exact analytical solution of the problem of current-carrying states of the josephson junction in external magnetic fields
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Field-free Josephson diode with controllable efficiency using magnetic tunnel barrier
Experimental demonstration of a tunable, field-free Josephson diode in sputter-deposited NbN/GdN/NbN mesa junctions showing up to 40% efficiency at zero field and operation to 4.2 K.