Hot-carrier relaxation time in graphene increases sharply for excitation energies between 0.42 and 0.48 eV due to resonant optical-phonon bottleneck.
Controlling Graphene Ultrafast Hot Carrier Response from Metal-like to Semiconductor-like by Electrostatic Gating
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Excitation-Energy-Selective Control of Hot-Carrier Cooling via a Resonant Optical-Phonon Bottleneck in Graphene
Hot-carrier relaxation time in graphene increases sharply for excitation energies between 0.42 and 0.48 eV due to resonant optical-phonon bottleneck.