Femtosecond laser annealing of 220 nm SOI produces a silicon LED emitting from visible to infrared with a claimed EQE above 0.26%, though the efficiency calculation is questionable.
1a) and observe ultra -wideband luminescence in the range of 900-1650 nm
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physics.optics 1years
2025 1verdicts
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High-efficiency silicon LED with ultra-wideband emission from visible to infrared at room temperature
Femtosecond laser annealing of 220 nm SOI produces a silicon LED emitting from visible to infrared with a claimed EQE above 0.26%, though the efficiency calculation is questionable.