Thin-channel AlN/GaN/AlN transistors on bulk AlN substrates, with silicon delta doping to suppress a parasitic hole gas, deliver 5.92 W/mm at 10 GHz with 65% power-added efficiency.
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XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Thin-channel AlN/GaN/AlN transistors on bulk AlN substrates, with silicon delta doping to suppress a parasitic hole gas, deliver 5.92 W/mm at 10 GHz with 65% power-added efficiency.