TiO2 FeFETs with HZO ferroelectric dielectric layers achieve on/off ratios up to 10^7, off-state leakage below 10^-12 A, and memory windows of 3-8 V across varied gate and channel lengths.
High - Endurance (>1011cycles) and Thermally-Stable Sub-100nm TiO2 Channel FeFET for Low-Power Memory Centric 3D-LSI Applications,
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.app-ph 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing
TiO2 FeFETs with HZO ferroelectric dielectric layers achieve on/off ratios up to 10^7, off-state leakage below 10^-12 A, and memory windows of 3-8 V across varied gate and channel lengths.