Wafer-scale hybrid MBE produces BaTiO3 films on STO/Si with growth rates exceeding 75 nm/h and an effective EO coefficient of 248 pm/V, outperforming PLD-grown films at 220 pm/V.
Despite its dominance of large-scale integration, silicon is a centrosymmetric crystal structurally devoid of a linear electro-optic (Pockels) response
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Wafer-scale hybrid molecular beam epitaxy of BaTiO3 and SrTiO3 on silicon
Wafer-scale hybrid MBE produces BaTiO3 films on STO/Si with growth rates exceeding 75 nm/h and an effective EO coefficient of 248 pm/V, outperforming PLD-grown films at 220 pm/V.