Liquid-metal printed polycrystalline InOx films form transistor channels with 125 cm² V⁻¹ s⁻¹ conductivity mobility, 107 cm² V⁻¹ s⁻¹ field-effect mobility when paired with ALD HfO₂, on/off ratios above 10⁷, and stable operation over 10⁴ cycles.
F.; Walia, S.; Syed, N.; Daeneke, T
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High-Mobility Indium Native Oxide Transistors via Liquid-Metal Printing in Air
Liquid-metal printed polycrystalline InOx films form transistor channels with 125 cm² V⁻¹ s⁻¹ conductivity mobility, 107 cm² V⁻¹ s⁻¹ field-effect mobility when paired with ALD HfO₂, on/off ratios above 10⁷, and stable operation over 10⁴ cycles.