SEM electron channelling contrast imaging reveals twist domains in TMD heterostructures, with contrast inversions explained by a semi-empirical elastic plus inelastic scattering model.
Imaging lattice reconstruction in homobilayers and heterobilayers of transition metal dichalcogenides
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abstract
Moir\'{e} interference effects have profound impact on the optoelectronic properties of vertical van der Waals structures. Here we establish secondary electron imaging in a scanning electron microscope as a powerful technique for visualizing registry-specific domains in vertical bilayers of transition metal dichalcogenides with common moir\'e phenomena. With optimal parameters for contrast-maximizing imaging of high-symmetry registries, we identify distinct crystal realizations of WSe$_2$ homobilayers and MoSe$_2$-WSe$_2$ heterobilayers synthesized by chemical vapor deposition, and demonstrate ubiquitous lattice reconstruction in stacking-assembled bilayers with near parallel and antiparallel alignment. Our results have immediate implications for the optical properties of registry-specific excitons in layered stacks of transition metal dichalcogenides, and demonstrate the general potential of secondary electron imaging for van der Waals twistronics.
fields
cond-mat.mtrl-sci 1years
2024 1verdicts
CONDITIONAL 1representative citing papers
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Electron Channelling Contrast SEM Imaging of Twist Domains in Transition Metal Dichalcogenide Heterostructures
SEM electron channelling contrast imaging reveals twist domains in TMD heterostructures, with contrast inversions explained by a semi-empirical elastic plus inelastic scattering model.