MBE-grown InAs p-i-n diodes under optimized conditions (450 C growth, 3x As2 flux, elevated In cell temperature) reach breakdown voltages above 0.3 V and reverse saturation current densities 200 times the radiative limit.
30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz
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Initial Development of MBE-Grown InAs Diodes for Thermoradiative Energy Harvesting
MBE-grown InAs p-i-n diodes under optimized conditions (450 C growth, 3x As2 flux, elevated In cell temperature) reach breakdown voltages above 0.3 V and reverse saturation current densities 200 times the radiative limit.