A four-stage InP HEMT LNA design is simulated to achieve 34.6 to 57.9 K noise temperature across 125 to 211 GHz, but it does not meet the gain spec and is unverified by measurement.
Mimura, Invention of High Electron Mobility Transistor (HEMT) and Contributions to Information and Communications Field
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125-211 GHz Low Noise MMIC Amplifier Design for Radio Astronomy
A four-stage InP HEMT LNA design is simulated to achieve 34.6 to 57.9 K noise temperature across 125 to 211 GHz, but it does not meet the gain spec and is unverified by measurement.