A coherent two-level system residing in the tunable coupler is shown to couple simultaneously to two distant qubits, producing tunable non-local non-Markovian decoherence and a 1/f noise spectrum spanning ten orders of magnitude.
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Optimization of doping, bias, and geometry in SiC p-i-n diodes reduces charge noise and optical linewidth for embedded divacancy spin centers, with a new leakage-current noise formalism mitigated by defect placement away from surfaces.
A system-level design methodology for scalable fluxonium processors with double-transmon couplers that supports high-fidelity gates, fast reset, and dispersive readout through frequency partitioning under realistic constraints.
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
citing papers explorer
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Non-Local and Non-Markovian Effects of a Microscopic Two-Level Defect in Superconducting Quantum Circuits
A coherent two-level system residing in the tunable coupler is shown to couple simultaneously to two distant qubits, producing tunable non-local non-Markovian decoherence and a 1/f noise spectrum spanning ten orders of magnitude.
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Enhancing Coherence of Spin Centers in p-n Diodes via Optimization Algorithms
Optimization of doping, bias, and geometry in SiC p-i-n diodes reduces charge noise and optical linewidth for embedded divacancy spin centers, with a new leakage-current noise formalism mitigated by defect placement away from surfaces.
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System-Level Design of Scalable Fluxonium Quantum Processors with Double-Transmon Couplers
A system-level design methodology for scalable fluxonium processors with double-transmon couplers that supports high-fidelity gates, fast reset, and dispersive readout through frequency partitioning under realistic constraints.
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Singlet-triplet oscillations in multivalley Si double quantum dots
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.