PE-ALD HZO on tungsten electrodes achieves wake-up-free ferroelectric switching and enhanced endurance up to 125°C primarily due to the beneficial oxidized tungsten interfacial layer, unlike on TiN.
Understanding the effect of top electrode on ferroelectricity in atomic layer deposited Hf0.5Zr0.5O2 thin films,
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Engineering Wake-Up-Free Ferroelectric Capacitors with Enhanced High-Temperature Reliability
PE-ALD HZO on tungsten electrodes achieves wake-up-free ferroelectric switching and enhanced endurance up to 125°C primarily due to the beneficial oxidized tungsten interfacial layer, unlike on TiN.