A theoretical framework shows that charge-trapping memory in nanometric FETs enables sub-thermal subthreshold swing by dynamically renormalizing the conduction band edge within the Landauer-Büttiker formalism.
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2D Canonical Approach for Beating the Boltzmann Tyranny Using Memory
A theoretical framework shows that charge-trapping memory in nanometric FETs enables sub-thermal subthreshold swing by dynamically renormalizing the conduction band edge within the Landauer-Büttiker formalism.