Tight electrostatic confinement drives single-electron valley splitting above 4 K (up to 0.76 meV) in buried silicon quantum wells, with a linear coefficient ~0.22 versus orbital energy in three of four dots.
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Confinement drives valley splitting above 4K in buried silicon quantum wells
Tight electrostatic confinement drives single-electron valley splitting above 4 K (up to 0.76 meV) in buried silicon quantum wells, with a linear coefficient ~0.22 versus orbital energy in three of four dots.