A graph-theoretic derivation plus simulations show that anisotropic magnetoresistance in artificial spin ice yields a state-dependent conductance and pinched I-V hysteresis, making the wires behave as memristors.
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Artificial Spin Ice Phase-Change Memory Resistors
A graph-theoretic derivation plus simulations show that anisotropic magnetoresistance in artificial spin ice yields a state-dependent conductance and pinched I-V hysteresis, making the wires behave as memristors.