The sharp high-energy photoluminescence edge in heavily p-doped GaAs is explained by a step-like electron distribution at a percolation threshold, with localized electrons recombining slowly and delocalized electrons relaxing quickly.
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Step-like spectral distribution of photoelectrons at the percolation threshold in heavily $p$-doped GaAs
The sharp high-energy photoluminescence edge in heavily p-doped GaAs is explained by a step-like electron distribution at a percolation threshold, with localized electrons recombining slowly and delocalized electrons relaxing quickly.